Galkin, K. N. and Dotsenko, S. A. and Galkin, N. G. and Kumar, M. and -, Govind and Shivaprasad, S. M. (2008) Optical and electron spectroscopy study of initial stages of room-temperature Mg film growth on Si (111). Semiconductors , 42 (4). pp. 475-480. ISSN 1063-7826

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The initial stages of room-temperature Mg film growth of Si (111) were studied using low-energy electron diffraction, electron energy-loss spectroscopy, and differential reflectance spectroscopy. In the studied range of magnesium film thickness (h = 0-0.2 nm), the formation of semiconductor magnesium silicide (Mg2Si), which is a promising material for silicon-silicide thermocouples, was detected. At small thicknesses of the deposited film, identical Mg2Si clusters are formed. An increase in the number of Mg atoms results in the formation of two-dimensional and then three-dimensional Mg2Si islands. Spectra of the optical response function delta Lambda(theta)'' were measured for all structures; these spectra represent a characteristic of opticalproperties of these structures.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s Springer Verlag .
Subjects: Physics
Depositing User: Ms Neetu Chandra
Date Deposited: 02 Sep 2015 06:41
Last Modified: 02 Sep 2015 06:41

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