Coondoo, Indrani and Malik, A. and Choudhary , Amit and Kumar, Ajay and Biradar, Ashok Manikrao
(2008)
Memory effect near transition temperature in Sm C* phase in nonsurface stabilized ferroelectric liquid crystals.
Journal of Applied Physics, 104 (8).
083525-1-083525-5.
ISSN 1089-7550
Abstract
Memory behavior in the ferroelectric liquid crystal
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FLC
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material, Felix 17/100, has been
investigated by electro-optical, dielectric, and hysteresis methods at different temperatures ranging
from room temperature to near ferro-paraelectric phase transition. Memory effect has been observed
in the studied material near the transition temperature in Sm C
�
phase in the cells having thickness
greater than the pitch value of the material. This is in contrast to the memory effect observed in
conventional FLCs where thickness of the cell has to be less than the pitch value of the material.
Electrical conductivity measurements elucidate that the steep increase in the conductivity near the
transition temperature in Sm C* phase enhances the motion of free ions and probably weakens the
depolarization field in the material, thereby showing memory effect.
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