Parashar, A. and Kumar, Sushil and Dixit, P. N. and Gope, Jhuma and Rauthan, C. M. S. and Hashmi, S. A. (2008) High-pressure condition of SiH4+Ar+H2 plasma for deposition of hydrogenated nanocrystalline silicon film. Solar Energy Materials & Solar Cells, 92. pp. 1199-1204. ISSN 0927-0248

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Abstract

The characteristics of 13.56-MHz discharged SiH4+Ar+H2 plasma at high pressure (2–8 Torr), used for the deposition of hydrogenated nanocrystalline silicon (nc-Si:H) films in a capacitively coupled symmetric PECVD system, has been investigated. Plasma parameters such as average electron density, sheath field and bulk field are extracted from equivalent circuit model of the plasma using outputs (current, voltage and phase) of RF V–I probe under different pressure conditions. The conditions of growth in terms of plasma parameters are correlated with properties of the hydrogenated nanocrystalline silicon films characterized by Raman, AFM and dc conductivity. The film deposited at 4 Torr of pressure, where relatively low sheath/bulk field ratio is observed, exhibits high crystallinity and conductivity. The crystalline volume fraction of the films estimated from the Raman spectra is found to vary from 23% to 79%, and the trend of variation is similar to the RF real plasma impedance data.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/s Elsevier B.V.
Uncontrolled Keywords:	nc/mc-Si:H;RF PECVD;Plasma impedance;Raman
Subjects:	Materials Science Physical Chemistry/Chemical Physics Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	10 Mar 2015 06:45
Last Modified:	10 Mar 2015 06:45
URI:	http://npl.csircentral.net/id/eprint/1066

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