Kumar, Sushil and Gope, Jhuma and Kumar, Aravind and Parashar, A. and Rauthan, C. M. S. and Dixit, P. N. (2008) High Pressure Growth of Nanocrystalline Silicon Films. Journal of Nanoscience and Nanotechnology , 8 (8). pp. 4211-4217. ISSN 1533-4880

[img] PDF
Restricted to Registered users only

Download (3176Kb) | Request a copy


Nanocrystalline silicon thin films were grown using gaseous mixture of 5% silane (SiH4) diluted in hydrogen (H2) and argon (Ar) in a radio frequency (13.56 MHz) plasma enhanced chemical vapor deposition technique. These films were deposited as a function of pressure and were characterized using AFM, Laser Raman, UV-VIS transmission, photoluminescence and electrical conductivity techniques. AFM micrographs shows that these films contain nanocrystallites of 30-60 nm size. Laser Raman peaks at 520 cm(-1) and photoluminescence peaks at 2.75 and 2.85 eV have been observed. The crystalline fraction in these films was varied from 30% to 80% with the variation of deposition pressure from 2 Torr to 8 Torr. There is an optimum pressure of 4 Torr where the maximum growth of nanocrystalline phases was observed. It has been found that nanocrystallites in these film enhanced the optical band gap and electrical conductivity. Also a voltage-current (V-I) probe was used to evaluate the various electrical parameters of the plasma used to deposit the nc-Si:H films for the present investigation. Growth via a SiH3 precursor, diffusion of hydrogen in the sub-surface and argon etching of weak bonds are some of the processes that may be involved in the nano crystallization process.

Item Type: Article
Additional Information: Copyright for this article belongs to M/s American Scientific Publishers.
Uncontrolled Keywords: Silicon Nano-Crystalline, Thin Films, Growth, PECVD
Subjects: Nanoscience/ Nanotechnology
Depositing User: Ms Neetu Chandra
Date Deposited: 09 Mar 2015 12:00
Last Modified: 09 Mar 2015 12:02
URI: http://npl.csircentral.net/id/eprint/1060

Actions (login required)

View Item View Item