Kumari, Kusum and Kumar, Umesh and Sharma, Shailesh N. and Chand, Suresh and Kakkar, Rita and Vankar, V. D. and Kumar, Vikram (2008) Effect of surface passivating ligand on structural and optoelectronic properties of polymer : CdSe quantum dot composites. Journal of Physics D: Applied Physics, 41 (23). 235409 -1-235409-9. ISSN 1361-6463

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Abstract

We demonstrate the effect of surface passivation of cadmium selenide quantum dots (CdSe QDs) (~5–7 nm) by tri-n-octylphosphene-oxide (TOPO) and oleic acid (OA) on the structural and optoelectronic properties of their respective polymer : CdSe composites by dispersing them in poly(2-methoxy-5(2-ethylhexyloxy)-1,4-phenylinevinylene) and poly(3-hexylthiophene) polymers. It has been found that OA passivated-QDs (~7 nm), as compared with TOPO passivated CdSe QDs (~5 nm), are of (i) high quality that provide better steric stability against coagulation, homogeneity and photostability to their respective polymer : CdSe composites, (ii) show low value of Stern–Volmer quenching constant (KSV) calculated from photoluminescence quenching measurements. These effects have been attributed to (i) CdSe(OA) (~7 nm) particles having relatively smaller surface energies compared with CdSe(TOPO) (~5 nm) particles thus showing lesser quenching capabilities (ii) dominance of respective processes of photoinduced Förster energy transfer between host polymer (donors) and guest CdSe nanocrystals (acceptors) in polymer : CdSe(OA) composites and charge transfer in polymer : CdSe(TOPO) composites.

Item Type:	Article
Additional Information:	Copyright for this article belongs to M/S IOP PUBLISHING.
Subjects:	Physics
Divisions:	UNSPECIFIED
Depositing User:	Ms Neetu Chandra
Date Deposited:	06 Jan 2014 13:17
Last Modified:	06 Jan 2014 13:17
URI:	http://npl.csircentral.net/id/eprint/1002

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